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Study of Non-Homogeneity of Magnetic Field Distribution in Single-Crystal Ni-Mn-Ga Magnetic Shape Memory Element in Actuators due to its Anisotropic Twinned Microstructure

Gabdullin, N & Khan, S. (2016). Study of Non-Homogeneity of Magnetic Field Distribution in Single-Crystal Ni-Mn-Ga Magnetic Shape Memory Element in Actuators due to its Anisotropic Twinned Microstructure. IEEE Transactions on Magnetics, 53(3), article number 4900108. doi: 10.1109/tmag.2016.2640201

Abstract

Magnetic shape memory (MSM) alloys are relatively new and very promising “smart” materials which respond to magnetic fields and exhibit the shape memory effect at room temperature. Maximum strain varies from 6 to 12% of the MSM element’s length depending on its microstructure. The shape memory effect and magnetic field-induced reorientation of MSM twin variants in low-temperature martensite phase are subject to an ongoing research for almost two decades. However, the magnetic field distribution in the MSM elements and effects of its varying magnetic permeability on bias magnetic field are not well studied. In this paper we present an extension to the existing modeling approach for MSM elements applicable to actuator design. The effects arising from single-crystal anisotropy and demagnetization effects due to non-homogeneous multi-variant MSM microstructure are studied and discussed. The proposed approach is validated by comparing computational results with previously reported measurement data.

Publication Type: Article
Additional Information: (c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Publisher Keywords: Magnetic shape memory (MSM) alloys, MSM actuators, electromagnetic analysis, non-homogeneous permeability, magnetic anisotropy
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments: School of Science & Technology > Engineering
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