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Characterization of silicon nanowire by use of full-vectorial finite element method.

Kejalakshmy, N., Agrawal, A., Aden, Y. , Leung, D. M., Rahman, B. M. & Grattan, K. T. V. (2010). Characterization of silicon nanowire by use of full-vectorial finite element method.. Applied Optics, 49(16), pp. 3173-3181. doi: 10.1364/ao.49.003173


We have carried out a rigorous H-field-based full-vectorial modal analysis and used it to characterize, more accurately, the abrupt dielectric discontinuity of a high index contrast optical waveguide. The full-vectorial H and E fields and the Poynting vector profiles are described in detail. It has been shown through this work that the mode profile of a circular silicon nanowire is not circular and also contains a strong axial field component. The single-mode operation, vector field profiles, modal hybridness, modal ellipticity, and group velocity dispersion of this silicon nanowire are also presented.

Publication Type: Article
Additional Information: This paper was published in Applied Optics and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments: School of Science & Technology > Engineering
SWORD Depositor:
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