Abstract

In this paper, an ultracompact design of a polarization rotator (PR) based on a silicon-on-insulator (SOI) platform is presented. The design contains two simple silicon nanowires but with unequal width, which will be easier to fabricate. It is shown here that a low-loss, wide-bandwidth, and 52.8-μm-long compact PR with polarization cross talk of −20  dB can be achieved. A full-vectorial finite element method and the least-squares boundary residual method are used to study the effects of the fabrication tolerances. This design shows reasonably stable performances.

Publication Type:	Article
Additional Information:	© 2014 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
Subjects:	R Medicine > RE Ophthalmology T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments:	School of Science & Technology > Engineering

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