Poly(3,6-dihexyl-thieno[3,2-b]thiophene vinylene): Synthesis, Field-Effect Transistors, and Photovoltaic Properties
He, Y., Wu, W., Zhao, G. , Liu, Y. & Li, Y. (2008). Poly(3,6-dihexyl-thieno[3,2-b]thiophene vinylene): Synthesis, Field-Effect Transistors, and Photovoltaic Properties. Macromolecules, 41(24), pp. 9760-9766. doi: 10.1021/ma801923c
Abstract
Two poly ( thieno [ 3, 2- b] thiophene vinylene ) derivatives ( P2 and P3 ) were prepared by Pd -catalyzed Stille -coupling method. Compared with poly ( 3- hexylthienylene vinylene ) ( P1 ), strong photoluminescence was observed for P2 and P3 solutions, while the maximum absorption of P2 and P3 are blue -shifted. The solution- processed organic field -effect transistors (OFETs) were fabricated with bottom gate/top contact geometry . The highest FET hole mobility of P3 after thermal annealing at 180 o C for 30 min reached 0.032 cm 2 /Vs with the on/ off ratio of 10 5 , which is a high value for the conjugated polymers . Polymer solar cells base on the polymers were fabricated , the power conversion efficiency of the devices based on P1 , P2 and P3 was 0.19%, 0.17% and 0.28%, respectively, under the illumination of AM1.5, 100 mW/cm 2 . The efficiency of the device based on P3 is ca. 50% higher than that of the devices based on P1 a nd P2 , which could be benefited from the higher hole mobility of P3 .
| Publication Type: | Article |
|---|---|
| Publisher Keywords: | Poly ( thieno [3, 2- b] thiophene vinylene ) s , organic field -effect transistors , photovoltaic properties |
| Departments: | School of Science & Technology > Engineering |
| SWORD Depositor: |
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