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Non-volatile optical memory based on a slot nanobeam resonator filled with GST material

Hu, H., Zhang, H., Zhou, L., Xu, Y., Lu, L., Chen, J. and Rahman, B. M. ORCID: 0000-0001-6384-0961 (2018). Non-volatile optical memory based on a slot nanobeam resonator filled with GST material. 2018 Asia Communications and Photonics Conference (ACP), doi: 10.1109/ACP.2018.8596243 ISSN 2162-108X


We propose a multi-level phase-change memory device based on a Ge 2 Sb 2 Te 5 (GST)-filled silicon slot nanobeam cavity. Simulations show that the nanobeam resonance can be tuned step-by-step through phase change of the GST, allowing for multi-level storage of optical data.

Publication Type: Conference or Workshop Item (Paper)
Additional Information: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publisher Keywords: silicon photonics; resonator; optical memory
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments: School of Mathematics, Computer Science & Engineering > Engineering > Electrical & Electronic Engineering
Date Deposited: 05 Apr 2019 09:01
Text - Accepted Version
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