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Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material

Wang, N., Zhang, H., Zhou, L., Lu, L., Chen, J. and Rahman, B. M. A. ORCID: 0000-0001-6384-0961 (2019). Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material. Micromachines, 10(7), 453.. doi: 10.3390/mi10070453

Abstract

In the following study, we propose optical memristive switches consisting of a silicon waveguide integrated with phase-change material Ge2Sb2Te5 (GST). Thanks to its high refractive index contrast between the crystalline and amorphous states, a miniature-size GST material can offer a high switching extinction ratio. We optimize the device design by using finite-difference-time-domain (FDTD) simulations. A device with a length of 4.7 μm including silicon waveguide tapers exhibits a high extinction ratio of 33.1 dB and a low insertion loss of 0.48 dB around the 1550 nm wavelength. The operation bandwidth of the device is around 60 nm.

Publication Type: Article
Additional Information: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
Publisher Keywords: integrated silicon photonic circuits; nanophononics; optical switch; phase change material
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments: School of Mathematics, Computer Science & Engineering > Engineering > Electrical & Electronic Engineering
Date Deposited: 02 Aug 2019 15:03
URI: https://openaccess.city.ac.uk/id/eprint/22617
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