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Non-volatile silicon photonic devices enabled by phase change material

Zhou, L., Zhang, H., Hu, H. , Wang, N., Lu, L., Rahman, B. M. ORCID: 0000-0001-6384-0961 & Chen, J. (2019). Non-volatile silicon photonic devices enabled by phase change material. In: 2019 18th International Conference on Optical Communications and Networks (ICOCN). . New York, USA: IEEE.


We review our recent research progress on silicon-Ge 2 Sb 2 Te 5 hybrid photonic devices. The optical transmission can be varied by 20 dB using micron-length GST. The inherent "self-holding" feature of GST make it attractive for low-power applications.

Publication Type: Book Section
Additional Information: © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publisher Keywords: silicon photonics; optical switch; optical memory; microring resonator
Subjects: Q Science > QD Chemistry
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments: School of Science & Technology > Engineering
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