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Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress

Kumari, S., Pathak, A. K. ORCID: 0000-0002-1656-3428, Gangwar, R. K. & Gupta, S. (2023). Performance Analysis of SiGe-Cladded Silicon MMI Coupler in Presence of Stress. Computation, 11(2), article number 34. doi: 10.3390/computation11020034

Abstract

In this study, we demonstrate the influence of operating temperature variation and stress-induced effects on a silicon-on-insulator (SOI)-based multi-mode interference coupler (MMI). Here, SiGe is introduced as the cladding layer to analyze its effect on the optical performance of the MMI coupler. SiGe cladding thickness is varied from 5 nm to 40 nm. Characterization of the MMI coupler for ridge waveguides with both rectangular and trapezoidal sidewall slope angle cross-sections is reviewed in terms of power splitting ratio and birefringence. Stress-induced birefringence as a function of operating temperature and cladding thickness for fundamental mode have been calculated. A trapezoidal waveguide with 40 nm of cladding thickness induces more stress and, therefore, affects birefringence more than a rectangular waveguide of any thickness. Simulation results using the finite element method (FEM) confirmed that operating temperature variation, upper cladding thickness, and its stress effect are significant parameters that drastically modify the performance of an MMI coupler.

Publication Type: Article
Additional Information: © 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Publisher Keywords: temperature, stress, interference, coupler, finite element method, photonics
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Departments: School of Science & Technology
School of Science & Technology > Department of Engineering
SWORD Depositor:
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