City Research Online

Abstract

High-performance organic transistor memory elements with donor-polymer blends as buffer layers are presented. These organic memory transistors have steep flanks of hysteresis with an ON/OFF memory ratio of up to 2 × 104, and a retention time in excess of 24 h. Inexpensive materials such as poly(methyl methacrylate), ferrocene and copper phthalocyanine are used for the device fabrication, providing a convenient approach of producing organic memory transistors at low cost and high efficiency

Publication Type:	Article
Additional Information:	This is the pre-peer reviewed version of the following article: Wu, W., Zhang, H., Wang, Y., Ye, S., Guo, Y., Di, C., Yu, G., Zhu, D. and Liu, Y. (2008), High-Performance Organic Transistor Memory Elements with Steep Flanks of Hysteresis. Adanced Functional Materials, 18: 2593–2601, which has been published in final form at 10.1002/adfm.200701269. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
Departments:	School of Science & Technology > Engineering
SWORD Depositor:	Symplectic Administrator

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