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Abstract

In this paper, we investigate performance of a self-sustained ON-OFF switch incorporating a new phase change material Ge2Sb2Se4Te1 with Silicon rib waveguide at the telecommunication wavelength 1.55 µm. A full-vectorial H-field finite element method is used to find effective index and modal loss of the quasi-TE modes in GSST-Si waveguide. Both the electro-refraction and electro-absorption type design are studied and the effect of GSST thickness and Si slab thickness on the device performances are presented. These results suggest that a GSST-Si rib waveguide with a 500 nm wide Si core, 60-90 nm Si slab thickness, and 40-60 nm GSST layer could be a realistic switch design which can yield a very compact, 5 μm long device with only 0.135 dB total insertion loss and more than 20 dB extinction ratio.

Publication Type:	Article
Additional Information:	© 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
Subjects:	R Medicine > RE Ophthalmology T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments:	School of Science & Technology > Engineering
SWORD Depositor:	Symplectic Administrator

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