Broadband Supercontinuum Generation in Mid-Infrared Range (0.8 µm – 4.5 µm) Using Low Power Dispersion-Engineered CMOS Compatible Silicon-Rich Nitride (SRN) Waveguide
Karim, M. R., Al Kayed, N. & Rahman, B. M. 
ORCID: 0000-0001-6384-0961 (2020).
Broadband Supercontinuum Generation in Mid-Infrared Range (0.8 µm – 4.5 µm) Using Low Power Dispersion-Engineered CMOS Compatible Silicon-Rich Nitride (SRN) Waveguide.
2020 IEEE Region 10 Symposium (TENSYMP), 2020,
pp. 246-249.
doi: 10.1109/TENSYMP50017.2020.9230715
Abstract
We numerically modeled a complementary metal-oxide-semiconductor (CMOS) compatible 5-mm-long rectangular waveguide for broadband mid-infrared (MIR) supercontinuum (SCG) generation. The waveguide is constituted using Si-Rich Nitride (SRN) as a core and LiNbO3 glass for its top and bottom claddings. The proposed waveguide structure is optimized for pumping only in the anomalous dispersion regime. Numerical analysis reveals that a wideband SCG into the MIR spanning the wavelength 0.8 μm to 4.5 μm could be generated by the proposed geometry using a very low pulse peak power of 40 W having width of 50-fs employing pump at 1.55 μm wavelength.
| Publication Type: | Article |
|---|---|
| Additional Information: | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Publisher Keywords: | Silicon-rich Silicon nitride, Planar waveguide, Dispersion, Supercontinuum generation |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Departments: | School of Science & Technology > Engineering |
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