Design and Performance Study of a Compact SOI Polarization Rotator at 1.55 mu m

Barh, A., Rahman, B. M., Varshney, R. K. & Pal, B. P. (2013). Design and Performance Study of a Compact SOI Polarization Rotator at 1.55 mu m. Journal of Lightwave Technology, 31(23), pp. 3687-3693. doi: 10.1109/JLT.2013.2286859

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Abstract

We numerically design a compact silicon (Si) based polarization rotator (PR) by exploiting power coupling through phase matching between the TM mode of a Si strip waveguide (WG) and TE mode of a Si-air vertical slot WG. In such structures, the coupling occurs due to horizontal structural asymmetries and extremely high modal hybridness due to high refractive index contrast of Si-on-insulator (SOI) structure. Design parameters of the coupler have been optimized to achieve a compact PR of ~135 μm length at the telecommunication wavelength of 1.55 μm. Maximum power coupling efficiency Cm, which is studied by examining the transmittance of light, is achieved as high as 80% for both polarization conversions. Fabrication tolerances and the band width of operation of the designed PR have also been studied.

Item Type: Article
Additional Information: © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords: Polarization sensitive device, Silicon photonics, Si-on-insulator (SOI) waveguides, Slot waveguides
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: School of Engineering & Mathematical Sciences > Engineering
URI: http://openaccess.city.ac.uk/id/eprint/12228

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