Improved design for SOI based evanescently coupled multilayer spot-size converter

Kohli, N., Rahman, B. M. & Sharma, E. K. (2017). Improved design for SOI based evanescently coupled multilayer spot-size converter. Optical and Quantum Electronics, 49(6), 229.. doi: 10.1007/s11082-017-1066-8

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Abstract

We report an improved version of a spot-size converter (SSC) consisting of a silicon nanowire evanescently coupled to a phase-matched Poly-Si multilayer structure. With wider transversal dimensions the multilayer structure expands the mode significantly thus increasing the coupling efficiency with the conventional single-mode fiber. Detailed optimization process of a 17-layer based SSC is discussed and its coupling efficiency with a high-NA fiber of radius 2 μm is obtained as 98% providing only 0.087 dB loss. Vertical alignment tolerance between the optimized SSC and a high-NA fiber of radius 2 μm is also shown. This novel design does not consist of a taper and can be fabricated by using CMOS compatible process. It has a short device length and more relaxed alignment tolerances with the fiber. Full-vectorial and computationally efficient finite element method and the least squares boundary residual method have been used for the analysis and optimization of the proposed structure.

Item Type: Article
Additional Information: The final publication is available at link.springer.com via http://dx.doi.org/10.1007/s11082-017-1066-8
Uncontrolled Keywords: Spot-size converter, Multilayers, Integrated optics, Silicon, photonics
Divisions: School of Engineering & Mathematical Sciences > Engineering
URI: http://openaccess.city.ac.uk/id/eprint/18508

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