Design and optimization of an Al doped ZnO in Si-slot for gas sensing

Bhattacharjee, R., Kejalakshmy, N. & Rahman, B. M. (2018). Design and optimization of an Al doped ZnO in Si-slot for gas sensing. IEEE Photonics Journal, doi: 10.1109/JPHOT.2018.2849383

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Abstract

A Silicon waveguide incorporating a vertical slot filled with Al+3 doped ZnO is proposed for gas sensing. The effect of different device parameters, namely, slot-height, slot-width and Si-width on two key optical features related to sensing, that is, difference in effective index and differential modal loss, before and after the exposure to gas are investigated using a fully-vectorial finite element method. The optimized sensor with a slot height of 400 nm, slot width of 100 nm and Si width of 65 nm yields the effective index difference of ~0.285 and differential loss ~4.35 dB/μm, indicating a viable device for gas sensing applications. Detailed numerical analyses also reveal that, at some structural parameters, two anti-crossing modes appear which can significantly alter the device performances and thus should be avoided.

Publication Type: Article
Additional Information: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publisher Keywords: Slot waveguide, Sensors
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments: School of Mathematics, Computer Science & Engineering > Engineering > Electrical & Electronic Engineering
URI: http://openaccess.city.ac.uk/id/eprint/20069

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