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High-performance organic transistor memory elements with steep flanks of hysteresis

Wu, W., Zhang, H., Wang, Y., Ye, S., Guo, Y., Di, C., Yu, G., Zhu, D. and Liu, Y. (2008). High-performance organic transistor memory elements with steep flanks of hysteresis. Advanced Functional Materials, 18(17), pp. 2593-2601. doi: 10.1002/adfm.200701269

Abstract

High-performance organic transistor memory elements with donor-polymer blends as buffer layers are presented. These organic memory transistors have steep flanks of hysteresis with an ON/OFF memory ratio of up to 2 × 104, and a retention time in excess of 24 h. Inexpensive materials such as poly(methyl methacrylate), ferrocene and copper phthalocyanine are used for the device fabrication, providing a convenient approach of producing organic memory transistors at low cost and high efficiency

Publication Type: Article
Additional Information: This is the pre-peer reviewed version of the following article: Wu, W., Zhang, H., Wang, Y., Ye, S., Guo, Y., Di, C., Yu, G., Zhu, D. and Liu, Y. (2008), High-Performance Organic Transistor Memory Elements with Steep Flanks of Hysteresis. Adanced Functional Materials, 18: 2593–2601, which has been published in final form at 10.1002/adfm.200701269. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
Departments: School of Mathematics, Computer Science & Engineering > Engineering
School of Mathematics, Computer Science & Engineering > Engineering > Electrical & Electronic Engineering
URI: http://openaccess.city.ac.uk/id/eprint/19015
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