High-performance organic transistor memory elements with steep flanks of hysteresis

Wu, W., Zhang, H., Wang, Y., Ye, S., Guo, Y., Di, C., Yu, G., Zhu, D. & Liu, Y. (2008). High-performance organic transistor memory elements with steep flanks of hysteresis. Advanced Functional Materials, 18(17), pp. 2593-2601. doi: 10.1002/adfm.200701269

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Abstract

High-performance organic transistor memory elements with donor-polymer blends as buffer layers are presented. These organic memory transistors have steep flanks of hysteresis with an ON/OFF memory ratio of up to 2 × 104, and a retention time in excess of 24 h. Inexpensive materials such as poly(methyl methacrylate), ferrocene and copper phthalocyanine are used for the device fabrication, providing a convenient approach of producing organic memory transistors at low cost and high efficiency

Item Type: Article
Additional Information: This is the pre-peer reviewed version of the following article: Wu, W., Zhang, H., Wang, Y., Ye, S., Guo, Y., Di, C., Yu, G., Zhu, D. and Liu, Y. (2008), High-Performance Organic Transistor Memory Elements with Steep Flanks of Hysteresis. Adanced Functional Materials, 18: 2593–2601, which has been published in final form at 10.1002/adfm.200701269. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
Divisions: School of Engineering & Mathematical Sciences > Engineering
URI: http://openaccess.city.ac.uk/id/eprint/19015

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